A Systematic Literature Review Of Spin-Orbit Torque In Multiferroic Heterostructures
1. Introduction
The search for low-power computing technologies has driven extensive investigation into spin-based electronics, which leverages the quantum spin degree of freedom in as well as its charge. Conventional spintronic elements, such as Magnetic Tunnel Junctions (MTJs) memory cells, depend on spin-polarized electron flow and external fields for switching. However, the demand for speedier, scalable, and more efficient operation has motivated the exploration of novel manipulation mechanisms, namely Voltage-Controlled Magnetic Anisotropy (VCMA). These mechanisms enable the direct control of magnetization via electric fields in specially engineered thin films, establishing them as highly attractive for use in non-volatile memory technologie
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3. Pursuing Ultra-Low-Power Storage Technologies
The insatiable desire for higher-capacity and energy-efficient memory has been a primary driving force behind magnetism-based research. The progression from AMR to TMR (Tunneling Magnetoresistance) constitutes a significant advance in storage density. SOT-MRAM (Spin-Orbit Torque MRAM) offers strong advantages such as excellent endurance and scalability. Yet, the pursuit for even lower writing currents and increased density has resulted in the study of alternative switching schemes. This part of the review critically examines the prospects of all-optical switching racetrack memory. These technologies potentially eliminate the need for energy-intensive charge currents altogether, by using nanoscale magnetic textures to control magnetization, enabling truly ultra-low-power and terabit-scale non-volatile memor
3. Review of Key Material Systems
The effectiveness of VCMA switching is highly contingent on the properties of constituent layers and the quality of their junctions. This review focuses on three primary classes of heterostructure
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5. Conclusion: Combining Methods for a Complete Picture
No single approach can offer a complete picture of the rich phenomena in spintronics. The real strength of modern research lies in the intelligent integration of several complementary experimental methods. For example, insights from pump-probe optics can validate the results of micromagnetic models, while nanoscale microscopy can uncover the microscopic origins of macroscopic transport behavior. The next frontier of probing spin dynamics will undoubtedly involve the further development of existing methods towards even higher spatial sensitivity, the advent of entirely new modalities (perhaps based on quantum probes), and the growing reliance on sophisticated data analysis and multiscale simulation to bridge the gap between theory and observation. Through this interdisciplinary approach, we continue to reveal the mysteries of the spin world at the deepest level